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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2520DF DESCRIPTION With TO-3PFa package High voltage,high speed Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of large screen colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage INCH Collector-emitter voltage Collector current (DC) ANG EMIC ES Open emitter Open base CONDITIONS OND TOR UC VALUE 1500 800 10 25 6 9 UNIT V V A A A A W ae ae Collector current-peak Base Collector current (DC) Base current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 45 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN BU2520DF SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A VCE=BVCES; VBE=0 TC=125ae VEB=7.5V; IC=0 100 1.1 1.0 2.0 300 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain hFE-2 DC current gain ANG CH IC=1.0A ; VCE=5V IC=6A ; VCE=5V VF Diode forward voltage CC Collector capacitance IN SEM E IF=6A OND IC 5 TOR UC 7 9.5 2.2 V 115 pF 13 f=1MHz;VCB=10V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2520DF SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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